Horizontal Diffusion Furnace

LPCVD Furnace

PECVD Furnace

Equipment for Solar Cell Production

Ultra High Purity Gas Delivery Systems

External Burn System

Chemical Control Panel and Precursor Temperature Controller

Control System SVconCS


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Horizontal LPCVD Furnace for High Process Performance

The design of the SVCS Low Pressure Chemical Vapor Deposition furnaces combines the multiple process capability with the needs of a maximum capacity for full production system (SVcFUR-FP) and high flexibility small scale versions for use in research and pilot production (SVcFUR-RD). It provides an easy-to-maintain, safe and reliable horizontal furnace platform. The SVCS design is outstanding for high efficiency, minimised footprint and low cost of ownership while offering high process flexibility.


LPCVD Processes

  • Silicon nitride
  • Low temperature oxide (LTO)
  • High temperature oxide (HTO)
  • TEOS oxide
  • Polysilicon, both with tilt and flat temperature profile
  • Doped polysilicon
  • Oxynitride


Features and Benefits

  • State of the art modular control system; in-house designed, highly tailored and in-house manufactured
  • Top notch components always selected for excellent results and trouble free long life of the furnace equipment
  • Up to 4 stacked quartz  tube reactor chambers for various procesess
  • Multiple methods of vacuum control, heated or unheated

    -Throttling Butterfly Valve – TBV

    -N ballast

    -Vacuum pump control with frequency converter

  • Integration of vacuum pump system in cooperation with leading vacuum pump manufacturers
  • Advanced water cooling tube level system: no thermal interference between different tubes
  • Proprietary designed water cooled flanges
  • Contactless fully automated boat-in-tube loading both cantilever or softloading configurations
  • Maintenance friendly mechanical design


Technical Data


Wafer size 150mm, 200 mm or any custom size
Wafer load FP: 100+
  RD: 25 (typical)
Heating system 3 or 5 zone
Flat zone FP: up to 1067 mm (42")
  RD: down to 300 mm(12")
  ア 0.5ーC across flat zone
Process temperature 200ーC to 1200ーC
Power consumption 80kW ・ 150kW depending on tube configuration
Power supply 150 mm: 3-phase, 400 or 480VAC, 140 A, 50 or 60 Hz
  200 mm: 3-phase, 400 or 480VAC, 160A, 60Hz
  (system is always adapted to country- specific power supply network)
Clean dry air 70 ・ 110 psig (4,8 to 7,6 bar)
Cooling water 40 - 60 LPM
Exhaust  210m³/h per tube
Options Boat elevator and wafer handling automation